CSD19535KTTT TEXAS INSTRUMENTS MOSFET 100V N-Channel NexFET Power MOSFET

Part Nnumber
CSD19535KTTT
Description
MOSFET 100V N-Channel NexFET Power MOSFET
Producer
TEXAS INSTRUMENTS
Basic price
4,46 EUR

The product with part number CSD19535KTTT (MOSFET 100V N-Channel NexFET Power MOSFET) is from company TEXAS INSTRUMENTS and distributed with basic unit price 4,46 EUR. Minimal order quantity is 1 pc, Approx. production time is 20 weeks.


Texas Instruments Product Category: MOSFET RoHS: No Id - Continuous Drain Current: 200 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 4.1 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 2.2 V Qg - Gate Charge: 75 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: SMD/SMT Package/Case: TO-263-3 Packaging: Reel Brand: Texas Instruments Channel Mode: Enhancement Ciss - Input Capacitance: 6.1 nF Configuration: Single Fall Time: 15 ns Forward Transconductance - Min: 301 S Minimum Operating Temperature: - 55 C Rise Time: 18 ns Series: CSD19535KTT Tradename: NexFET Typical Turn-Off Delay Time: 21 ns


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